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Tuesday, May 12, 2020 | History

2 edition of Vertical channel metal-oxide-silicon field effect transistor found in the catalog.

Vertical channel metal-oxide-silicon field effect transistor

T.M.S Heng

Vertical channel metal-oxide-silicon field effect transistor

by T.M.S Heng

  • 273 Want to read
  • 8 Currently reading

Published by Westinghouse R.&D. Center .
Written in English


Edition Notes

StatementT.M.S. Heng (et al.) ; final report, 1 Novlember 1976.
ID Numbers
Open LibraryOL20085213M


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Vertical channel metal-oxide-silicon field effect transistor by T.M.S Heng Download PDF EPUB FB2

The field-effect transistor (FET) is a type of transistor which uses an electric field to control the flow of are devices with three terminals: source, gate, and control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.

FETs are also known as unipolar transistors since they involve. Metal oxide semiconductor field-effect transistor (MOSFET) is the main building block in low-power and high-performance very large-scale integration (VLSI) chips for the last few decades.

Device scaling is the guiding force toward technological advancements, which allows more devices to be integrated on a single die thereby allowing greater. The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically voltage of the covered gate determines the electrical.

The field effect transistor, FET is a key semiconductor device for the electronics industry. The FET used in many circuits constructed from discrete components in areas from RF technology to power control and electronic switching to general amplification.

However the major use for the field effect transistor, FET is within integrated circuits. Figure 2 illustrates the basic construction and operating principles of a simple n-channel JFET. It consists of a bar of n-type semiconductor material with a drain terminal at one end and a source terminal at the other.

A p-type control electrode or gate surrounds (and is joined to the surface of) the middle section of the n-type bar, thus forming a p-n junction. S.K. Kurinec, in Encyclopedia of Materials: Science and Technology, Complementary metal oxide semiconductor (CMOS) devices include both n- and p-channel metal oxide semiconductor field effect transistors (MOSFETs) on a single chip of ability to improve performance consistently while decreasing power consumption has made CMOS architecture the dominant .